c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t rev.a oct .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 68a,60v, r ds(on) (max18m ? )@v gs =10v ? ultra-low gate charge(typical 20nc) ? improved dv/dt capability ? 100%avalanche tested ? maximum junction temperature range(175 ) general description this power mosfet is produced using winsemi's advanced planar stripe,dmos technology.this latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,dc-dc converters and power management in portable and,battery operated products. absolute maximum ratings symbol parameter value units v dss drain source voltage 60 v i d continuous drain current(@tc=25 ) 68 a continuous drain current(@tc=100 ) 51 a i dm drain current pulsed (note1) 280 a v gs gate to source voltage 25 v e as single pulsed avalanche energy (note2) 800 mj dv/dt peak diode recovery dv /dt (note3) 7.0 v/ ns p d total power dissipation(@tc=25 ) 115 w derating factor above 25 0.77 w/ t j ,t stg junction and storage temperature -55~1 75 t l maximum lead temperature for soldering purpose, 1/8 form case for 5 seconds 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 1.3 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min typ max unit gate leakage current i gss v gs = 20 v,v ds =0v - - 100 na drain cut -off current i dss v ds = 48 v,v gs =0v - - 1 a v ds = 48 v,v gs =0v ,t j =125 100 drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.066 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.0 - 4 .0 v drain -source on resistance r ds(on) v gs =10v,i d = 35 a - - 18 m ? input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1088 pf reverse transfer capacitance c rss - 67 output capacitance c oss - 158 switching time rise time tr v dd = 30 v, i d = 1 a v g =10v r g = 50 ? (note4,5) - 45.1 ns turn- in delay time t d( on ) - 8.7 fall time tf - 6.8 turn-off delay time t d( off ) - 25.6 total gate charge(gate-source plus gate-drain) qg v d d = 30 v, v gs =10v, i d = 1 a (note 4 ,5) - 20 nc gate-source charge qgs - 7 - gate-drain("miller") charge qgd - 6.8 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr integral reverse p-n junction diode in the mosfet - - 68 a pulse drain reverse current i drp - - 280 a forward voltage(diode) v dsf i dr = 50 a,v gs =0v - - 1.2 v reverse recovery time trr i dr = 68 a,v gs =0v, di dr / dt =100 a / s - 62 - ns reverse recovery charge qrr - 110 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 250u h i as = 68 a,v dd = 25 v,r g =0 ? ,starting t j =25 3.i sd 68 a,di/dt 3 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 3 / 7 fig.1 on state characteristics fig.2 transfer characteristics fig.3 on resistance variation vs drain current and gate voltage fig.4 on state current vs allowable case temperature fig.6 gate charge characteristics fig.5chpacitance c haracteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 4 / 7 fig. 8 on-resistance variation vs junction temperature fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature fig. 11 transient thermal response curve fig.7breakdown voltage variation vs,junction temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 5 / 7 fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 6 / 7 fig.1 5 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p70 p70 p70 p70 n n n n 06t 06t 06t 06t 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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